Hirotaka Yamada
Joint researcher(2021/Oct~2024/Mar)
Kaito Hikake
Master degree(2022/Apr~2024/Mar)/Tokyo Electron
E-mail: hikake[at]nano.iis.u-tokyo.ac.jp
Deepak Sharma
Master degree(2021/Apr~2023/Mar) Hitachi Central Research
Email: d-sharma[@]iis.u-tokyo.ac.jp
QiYun Gong
Master course 2nd(2020/Apr ~ 2023/Mar）
Eメール: qy-gong[at]nano.iis.u-tokyo.ac.jp
Jixuan Wu
Post-doc researcher (2019/Oct~2022/Mar) / Shandong University, Tenure track researcher
Email:jixuanwu[at]nano.iis.u-tokyo.ac.jp
Topic: Ab-initio study on ferroelectric devices
Yoshiki Sawabe
Master degree (2020/Apr~2022/Mar) / Sony Semiconductor Solution
Email: sawabe[at]nano.iis.u-tokyo.ac.jp
Topic: Study on ferroelectric polarization dynamics and its impact on device property
Mei Xiaoran
Master degree (2019/Oct~2021/Sep), post-master researcher (2021/Oct~2022/Feb) / Sony Semiconductor Solution
Email: meixiaoran[at]nano.iis.u-tokyo.ac.jp
Topic: Device physics of ferroelectric transistor
Satoshi Shindo
Post-doc researcher
Email:shindo[at]nano.iis.u-tokyo.ac.jp
Topic: Study on oxide semiconductor devices
Fei Mo
Ph.D (2017~2020) Post-doc researcher (2020~2021) / KIOXIA
Email:mofei[at]nano.iis.u-tokyo.ac.jp
Topic:Artificial neural network with novel memory technology
Jiawen Xiang
Master degree / Micron
Email:xjw0329[at]nano.iis.u-tokyo.ac.jp
Topic: Ferroelectric transistor with novel channel material
Chengji Jin
Ph.D (2017~2020) / Zhejiang Lab
E-mail: cjjin[at]nano.iis.u-tokyo.ac.jp
Theme: Physics and design of negative capacitance transistor
Paul Davin Johansen
Master degree (2018~2020) / TEL America
E-mail: johansenp[at]nano.iis.u-tokyo.ac.jp
Theme: Ferroelectric memory device and its AI algorithm application
Hidemasa Yoshimura
Master degree (2018~2020) / Canon
Email: yoshimura[at]nano.iis.u-tokyo.ac.jp
Topic: Design of Ferroelectric tunnel junction memory
Yusaku Tagawa
Master degree (2017~2019) / Currently in Ph.D candidate
Email:tagawa[at]nano.iis.u-tokyo.ac.jp
Topic: Study on Memory Operation of Tunnel Junction by Using Spontaneous Polarization Reversal
Kyungmin Jang
Doctor degree (2015~2018, co-advised Hiramoto lab's student) / Toshiba Memory
Email:kmjang[at]nano.iis.u-tokyo.ac.jp
Topic: Negative-Capacitance FETs based on Ferroelectric Hafnium Oxide for Low-Power VLSIs
Nozomu Ueyama
Master degree (2015~2017) / JFE Steel
Email:kmjang[at]nano.iis.u-tokyo.ac.jp
Topic: Study on Ferroelectric HfO2 Nano Film for Low-Power Operating Devices