OB

Fei Mo

Ph.D (2017~2020) Post-doc researcher (2020~2021) / KIOXIA
Email:mofei[at]nano.iis.u-tokyo.ac.jp

Topic:Artificial neural network with novel memory technology

Jiawen Xiang

Master degree / Micron
Email:xjw0329[at]nano.iis.u-tokyo.ac.jp

Topic: Ferroelectric transistor with novel channel material

Chengji Jin

Ph.D (2017~2020) / Zhejiang Lab
E-mail: cjjin[at]nano.iis.u-tokyo.ac.jp
Theme: Physics and design of negative capacitance transistor

Paul Davin Johansen

Master degree (2018~2020) / TEL America
E-mail: johansenp[at]nano.iis.u-tokyo.ac.jp
Theme: Ferroelectric memory device and its AI algorithm application

Hidemasa Yoshimura

Master degree (2018~2020) / Canon
Email: yoshimura[at]nano.iis.u-tokyo.ac.jp

Topic: Design of Ferroelectric tunnel junction memory

Yusaku Tagawa

Master degree (2017~2019) / Currently in Ph.D candidate
Email:tagawa[at]nano.iis.u-tokyo.ac.jp

Topic: Study on Memory Operation of Tunnel Junction by Using Spontaneous Polarization Reversal

Kyungmin Jang

Doctor degree (2015~2018, co-advised Hiramoto lab's student) / Toshiba Memory
Email:kmjang[at]nano.iis.u-tokyo.ac.jp

Topic: Negative-Capacitance FETs based on Ferroelectric Hafnium Oxide for Low-Power VLSIs

Nozomu Ueyama

Master degree (2015~2017) / JFE Steel
Email:kmjang[at]nano.iis.u-tokyo.ac.jp

Topic: Study on Ferroelectric HfO2 Nano Film for Low-Power Operating Devices