研究発表

2020 (現在のページ)     アーカイブ

Fei Mo, Takuya Saraya, Toshiro Hiramoto and Masaharu Kobayashi, "Reliability characteristics of metal/ferroelectric-HfO2/IGZO/metal capacitor for non-volatile memory application", Applied Physics Express, 13, 074005, June 23 (2020).

Jixuan Wu, Fei Mo, Takuya Saraya, Toshiro Hiramoto and Masaharu Kobayashi, "A Monolithic 3D Integration of RRAM Array with Oxide Semiconductor FET for In-memory Computing in Quantized Neural Network AI Applications", VLSI Symposium on Technology, pp.XX-YY, June 14 (2020).

小林正治,「【解説】強誘電体HfO2メモリの現状と課題」,応用物理,pp.314-320 (2020).

Chengji Jin, Takuya Saraya, Toshiro Hiramoto and Masaharu Kobayashi, "Physical Mechanisms of Reverse DIBL and NDR in FeFET with Steep Subthreshold Swing", IEEE Journal of Electron Device Society, 8, pp. 429-434, April. 8th, 2020.