研究発表

2019 (現在のページ)     アーカイブ

Masaharu Kobayashi, "Emerging ferroelectric memory devices by material innovation", ISCSI-8, pp. 63-64, Tohoku University, November 28, 2019.

小林正治,莫非,多川友作,更屋拓哉,平本俊郎,「強誘電体HfO2トンネル接合メモリのスケーラビリティに関する検討」,シリコン材料・デバイス研究会(SDM研究会),機械振興会館,2019年11月7日,pp. 5-8.

Masaharu Kobayashi, "Comprehensive Understanding of Negative Capacitance FET From the Perspective of Transient Ferroelectric Model", 2019 IEEE 13th International Conference on ASIC (ASICON),Chongqing, China, p.21, November 1, 2019,

Fei Mo, "Scalability Study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method", Non-Volatile Memory Technology Symposium (NVMTS) 2019, pp. 40-41, Washington Duke Inn, Durham, North Carolina, USA, Oct. 28, 2019.

Masaharu Kobayashi, "Ferroelectric-HfO2 transistor memory with IGZO channel", the 77th Fujihara Seminar, Hakone(Kanagawa),  pp. 18-19, October 16, 2019.

小林正治、「負性容量トランジスタの理解と今後の展望」、 第80回応用物理学会秋季学術講演会,北海道大学(北海道),2019年9月20日

FEI MO1, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi, “Demonstration of HfO2 based Ferroelectric FET with Ultrathin-body IGZO for High-Density Memory Application”, 第80回応用物理学会秋季学術講演会,北海道大学(北海道),2019年9月18日

Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi, “Mechanisms of Reverse-DIBL and NDR Observed in Ferroelectric FETs”, 第80回応用物理学会秋季学術講演会,北海道大学(北海道),2019年9月18日

小林正治,莫非,多川友作,金成吉,安珉柱,更屋拓哉,平本俊郎,「極薄IGZOチャネルを有する強誘電体トランジスタメモリの検討」,シリコン材料・デバイス研究会(SDM研究会),北海道大学,2019年8月9日,pp. 59-62.

Masaharu Kobayashi, "Ferroelectric-HfO2 based transistor and memory technologies enabling ultralow power IoT applications", Asia-Pacific Wordshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2019, pp. 86-87, July 1, 2019.

Chengji Jin, Takuya Saraya, Toshiro Hiramoto, and Masaharu Kobayashi, "Transient Negative Capacitance as Cause of Reverse Drain-induced Barrier Lowering and Negative Differential Resistance in Ferroelectric FETs", VLSI technology symposium 2019, pp.220-221, June 13, 2019.

Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto and Masaharu Kobayashi, "Experimental Demonstration of Ferroelectric HfO2 FET with Ultrathin-body IGZO for High-Density and Low-Power Memory Application", VLSI technology symposium 2019, pp. 42-43, June 11, 2019.

Masaharu Kobayashi, "Challenges and opportunities of ferroelectric-HfO2 based transistor and memory technologies", Symposium on Nano Device Technology, Hsinchu, Taiwan, Apr. 26, p.2, 2019.