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Zhuo Li, Jixuan Wu, Xiaoran Mei, Xingyu Huang, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka, and Masaharu Kobayashi, "A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET with Indium Oxide", IEEE Electron Device Letters, Vol. 43, No. 8, pp. 1227-1230, June, 20, 2022.
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小林正治，「HfO2系強誘電体を用いた三次元集積メモリデバイスの展望」，電子情報通信学会 集積回路研究会（ICD），ハイブリッド開催（川崎），2022年4月12日