研究発表

2021 (現在のページ)     アーカイブ

Jixuan Wu, Fei Mo, Takuya Saraya, Toshiro Hiramoto, Motooka Ochi, Hiroshi Goto, and Masaharu Kobayashi, "Monolithic Integration of FET and Ferroelectric-Capacitor  Enabled by Sn-doped InGaZnO for 3D Embedded RAM Application", 第82回応用物理学会秋季学術講演会, 11a-N205-11, September 11 (2021), オンライン開催

Fei Mo, J. Xiang, X. mei, Y. Sawabe, T. Saraya, T. Hiramoto, C. Su, V. Hu, and M. Kobayashi, "Role of GIDL Current for Efficient Erase Operation and Interfacial Layer Engineering for Low-Voltage Operation in HfO2-based FeFET", 第82回応用物理学会秋季学術講演会, 11a-N205-10, September 11 (2021), オンライン開催

Xiaoran Mei, Fei Mo, Toshiro Hiramoto, and Masaharu Kobayashi, "Simulation Study on the Role of GIDL Current for Erase Operation in FeFETs", 第82回応用物理学会秋季学術講演会, 11a-N205-9, September 11 (2021), オンライン開催

Fei Mo, Xiaoran Mei, Takuya Saraya, Toshiro Hiramoto and Masaharu Kobayashi, "Simulation Study on Memory Characteristics of IGZO-Channel FeFET from 2D Planer to 3D Vertical Structure for Channel Structure Engineering", International Conference on Solid State Devices and Materials (SSDM) 2021, pp.83-84, September 9 (2021), Virtual conference.

Masaharu Kobayashi, Fei Mo, Jiawen Xiang, Jixuan Wu, Takuya Saraya, and Toshiro Hiramoto, "Technology Challenge and Opportunity of HfO2-based FeFET Memory", International Conference on Solid State Devices and Materials (SSDM) 2021, pp.133-134, September 8 (2021), Virtual conference.

Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto, Chun-Jung Su, Vita Pi-Ho Hu, and Masaharu Kobayashi, "Critical Role of GIDL Current for Erase Operation in 3D Vertical FeFET and Compact Long-term FeFET Retention Model", VLSI symposium on Technology, T16-2, June 19 (2021), Virtual Conference.

Jixuan Wu, Fei Mo, Takuya Saraya, Toshiro Hiramoto, Motooka Ochi, Hiroshi Goto, and Masaharu Kobayashi, "Mobility-enhanced FET and Wakeup-free Ferroelectric Capacitor Enabled by Sn-doped InGaZnO for 3D Embedded RAM Application", VLSI symposium on Technology, T6-2, June 17 (2021), Virtual Conference.

Jiawen Xiang, Wen Hsin Chang, Takuya Saraya, Toshiro Hiramoto, Toshifumi Irisawa, and Masaharu Kobayashi, "Experimental Demonstration of HfO2-based Ferroelectric FET with MoS2 Channel for High-Density and Low-Power Memory Application", Silicon Nano Workshop 2021, S3-02, June 13, Virtual Conference.

小林正治,「3Dニューラルネットワークの実現に向けたIGZOトランジスタ―と抵抗変化型メモリー(RRAM)の3Dモノリシック集積化技術の開発」,Yano E plus, pp.100-105, May 15 (2021).

Masaharu Kobayashi, "Ferroelectric-HfO2 FeFET for 3D High-Density Memory Application", MRS Spring Meeting, April 19 (2021), Virtual Conference.

Masaharu Kobayashi, "Physics and Applications of Emerging Ferroelectric Devices", IEEE Electron Devices Technology and Manufacturing Conference (EDTM) 2021, pp.106-108, April 11 (2021), Virtual Conference.