研究発表

2022 (現在のページ)     アーカイブ

Masaharu Kobayashi, Jixuan Wu, Yoshiki Sawabe, Saraya Takuya and Toshiro Hiramoto, "Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics", Nano Convergence, 9, 50, November 12 (2022)

Xingyu Huang, Yuki Itoya, Zhuo Li, Takuya Saraya, Toshiro Hiramoto, and Masaharu Kobayashi, "Modeling and Simulation of Antiferroelectric FETs with Oxide Semiconductor Channel Using Half-Loop Hysteresis for Memory Applications", International Conference on Solid State Devices and Materials (SSDM), pp. 537-538, Makuhari Messe, September 28 (2022).

Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto, Chun-Jung Su, Vita Pi-Ho Hu, and Masaharu Kobayashi, "On the thickness dependence of the polarization switching kinetics in HfO2-based ferroelectric", Applied Physics Letter, Vol. 121, 082903, August 23 (2022).

Zhuo Li, Jixuan Wu, Xiaoran Mei, Xingyu Huang, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka, and Masaharu Kobayashi, "A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET with Indium Oxide", IEEE Electron Device Letters, Vol. 43, No. 8, pp. 1227-1230, June, 20, 2022.

Zhuo Li, Jixuan Wu, Xiaoran Mei, Xingyu Huang, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka, and Masaharu Kobayashi, "A Vertical Channel Ferroelectric/Anti-Ferroelectric FET with ALD InOx and Field-Induced Polar-Axis Alignment for 3D High-Density Memory", 2022 IEEE Silicon Nanoelectronics Workshop, pp.9-10, June 11, 2022, Hawaii, US.

小林正治,「HfO2系強誘電体を用いた三次元集積メモリデバイスの展望」,電子情報通信学会 集積回路研究会(ICD),ハイブリッド開催(川崎),2022年4月12日